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| 2008. 12. 18 1/2 semiconductor technical data revision no : 0 switching type power supply application. converter & chopper application. features ? average output rectified current : i o =20a. ? repetitive peak reverse voltage : v rrm =45v. ? low peak forward voltage : 0.58v(max.) maximum rating (ta=25 ? ) 1. anode 2. cathode 3. anode dim millimeters to-220ab 10.30 max 15.30 max 0.80 3.60 0.20 3.00 6.70 max 13.60 0.50 5.60 max 0.50 1.50 max 2.54 4.70 max 2.60 a b c d e f g h j k l m n o p a e mm 123 f b g h l c k j o n p d 1.37 max 1.50 max r s q c t q 1.50 r9. 50 0.20 s8.00 0.20 t2. 90 max + _ + _ + _ + _ electrical characteristics (ta=25 ? ) B20A45VC schottky barrier type diode (low vf type) characteristic symbol test condition min. typ. max. unit peak forward voltage (note) v fm i fm =10a - - 0.58 v repetitive peak reverse current (note) i rrm v rrm =rated - - 150 ? thermal resistance (note) r th(j-c) juction to case - - 2.0 ? /w characteristic symbol rating unit repetitive peak reverse voltage v rrm 45 v average output rectified current (tc=115 ? ) (note) i o 20 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 250 a junction temperature t j -40 ?- 150 ? storage temperature range t stg -55 ?- 150 ? note : average forward current of centertap full wave connection. note : a value of one cell 3 1 2
2008. 12. 18 2/2 B20A45VC revision no : 0 average forward current i f(av) (a) average forward current i f(av) (a) p f(av) (w) average forward current i f(av) (a) p f(av) - i f(av) average forward power dissipation reverse current i r (ma) reverse voltage v r (v) i r - v r i f - v f forward voltage v f (v) forward current i f (a) i f - t c i f - t a case temperature tc ( c) ambient temperature t a ( c) 0 0 0 0 0 0.001 0 0 1 0.2 0.4 0.6 0.8 0.1 0.3 0.5 0.7 10 100 10 20 30 0.01 0.1 1.0 10 100 70 90 110 130 150 5 10 dc 40 80 120 160 5 10 15 20 rated voltage applied ja ja r =16 c/w r =60 c/w (no heat sink) dc dc 4.0 8.0 12 16 4.0 16 dc 8.0 12 15 20 25 20 24 28 20 40 50 t j =150 c t j =25 c rated voltage r =3.5 c/w jc applied t j =150 c t j =125 c t j =25 c c - v r reverse voltage v r (v) 0 100 10 20 30 40 5152535 1000 capacitance c (pf) j |
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